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GWM160-0055P3

IC FULL BRIDGE 3PH W/MOSF ISODIL

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SeekIC No. : 003430030 Detail

GWM160-0055P3: IC FULL BRIDGE 3PH W/MOSF ISODIL

GWM160-0055P3 Data Sheet

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Part Number:
GWM160-0055P3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: - Manufacturer: IXYS
FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard
Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25° C: 160A
Gate-Source Cutoff Voltage : - 4.5 V Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) @ Vds: - Power - Max: -
Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL?
Supplier Device Package: ISOPLUS-DIL?    

Description

Input Capacitance (Ciss) @ Vds: -
Mounting Type: Surface Mount
Series: -
FET Feature: Standard
Power - Max: -
Vgs(th) (Max) @ Id: 4V @ 1mA
Drain to Source Voltage (Vdss): 55V
Packaging: Tube
Manufacturer: IXYS
FET Type: 6 N-Channel (3-Phase Bridge)
Gate Charge (Qg) @ Vgs: 90nC @ 10V
Package / Case: ISOPLUS-DIL?
Supplier Device Package: ISOPLUS-DIL?
Current - Continuous Drain (Id) @ 25° C: 160A
Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V


Parameters:

Technical/Catalog InformationGWM160-0055P3
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET Polarity6 N-Channel (3-Phase Bridge)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs3 mOhm @ 100A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / Case*
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names GWM160 0055P3
GWM1600055P3



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