Features: • Fast access times: 10, 12, 15 and 20ns• Fast OE# access times: 5, 6, 7 and 8ns• Single +3.3V +0.3V power supply• Fully static -- no clock or timing strobes necessary• All inputs and outputs are TTL-compatible• Three state outputs• Center power ...
GVT7364A16: Features: • Fast access times: 10, 12, 15 and 20ns• Fast OE# access times: 5, 6, 7 and 8ns• Single +3.3V +0.3V power supply• Fully static -- no clock or timing strobes necess...
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Features: • Fast access times: 4.8, 5, 6, and 7ns• Fast clock speed: 100, 83, and 66MH...
Features: • Fast access times: 2.5, and 3.5ns• Fast clock speed: 250, 225, 200, and 16...
Features: • Zero Bus Latency, no dead cycles between write and read cycles• Fast clock...
• Fast access times: 10, 12, 15 and 20ns
• Fast OE# access times: 5, 6, 7 and 8ns
• Single +3.3V +0.3V power supply
• Fully static -- no clock or timing strobes necessary
• All inputs and outputs are TTL-compatible
• Three state outputs
• Center power and ground pins for greater noise immunity
• Easy memory expansion with CE# and OE# options
• Automatic CE# power down
• High-performance, low-power consumption, CMOS double-poly, double-metal process
• Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil TSOP
Voltage on VCC Supply Relative to VSS.........-0.5V to +4.6V
VIN ..........................................................-0.5V to VCC+0.5V
Storage Temperature (plastic) ....................-55oC to +125o
Junction Temperature ................................................+125o
Power Dissipation ........................................................1.0W
Short Circuit Output Current .......................................50mA
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The GVT7364A16 is organized as a 65,536 x 16 SRAM using a four-transistor memory cell with a high performance, silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using double-layer polysilicon, double-layer metal technology.
GVT7364A16 offers center power and ground pins for improved performance and noise immunity. Static design eliminates the need for external clocks or timing strobes. For increased system flexibility and eliminating bus contention problems, GVT7364A16 offers chip enable (CE#), separate byte enable controls (BLE# and BHE#) and output enable (OE#) with this organization.
The GVT7364A16 offers a low power standby mode when chip is not selected. This allows system designers to meet low standby power requirements.