Features: • Mesa epitaxial silicon construction• Silicon dioxide passivated• Superior mid range linear characteristics• High tuning ratios• High Q• Available in common cathode style• Available in chip form (add suffix -000)Application• TCXOs, VCXOs...
GVD20435: Features: • Mesa epitaxial silicon construction• Silicon dioxide passivated• Superior mid range linear characteristics• High tuning ratios• High Q• Available in c...
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