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GTT8209E

Features: · Lower Gate Charge·Small Package Outline·RoHS CompliantSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 ID @TA=25 7 A Continuous Drain Current...

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SeekIC No. : 004357147 Detail

GTT8209E: Features: · Lower Gate Charge·Small Package Outline·RoHS CompliantSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage ...

GTT8209E Data Sheet

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Part Number:
GTT8209E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

· Lower Gate Charge
·Small Package Outline
·RoHS Compliant


Specifications

Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current3
ID @TA=25
7
A
Continuous Drain Current3
ID @TA=70
5.7
A
Pulsed Drain Current1,2
IDM
30
A
Total Power Dissipation
PD @TA=25
1.2
W
Linear Derating Factor
0.01
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150



Description

The GTT8209E used advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.

The GTT8209E is universally used for all commercial-industrial applications.




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