Features: *Low Gate Charge*Low On-resistanceSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 ID @TA=25 -2.3 A Continuous Drain Current3 ID @TA=70 -2.0 A Pulsed Drain Current1 ID...
GTT2625: Features: *Low Gate Charge*Low On-resistanceSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage | VDS | -30 | V |
Gate-Source Voltage | VGS | ±12 | V |
Continuous Drain Current3 | ID @TA=25 | -2.3 | A |
Continuous Drain Current3 | ID @TA=70 | -2.0 | A |
Pulsed Drain Current1 | IDM | -20 | A |
Total Power Dissipation | PD @TA=25 | 1.2 | W |
Linear Derating Factor | 0.01 | W/ | |
Operating Junction and Storage Temperature Range | Tj, Tstg | -55 ~ +150 |
The GTT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The GTT2625 is universally used for all commercial-industrial applications.