Features: *Low Gate Charge*Low On-resistanceSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3 ID @TA=25 -2 mA Continuous Drain Current3 ID @TA=70 -1.6 mA Pulsed Drain Current1 ID...
GTT2623: Features: *Low Gate Charge*Low On-resistanceSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage | VDS | -30 | V |
Gate-Source Voltage | VGS | ±20 | V |
Continuous Drain Current3 | ID @TA=25 | -2 | mA |
Continuous Drain Current3 | ID @TA=70 | -1.6 | mA |
Pulsed Drain Current1 | IDM | -20 | mA |
Total Power Dissipation | PD @TA=25 | 1.2 | W |
Linear Derating Factor | 0.01 | W/ | |
Operating Junction and Storage Temperature Range | Tj, Tstg | -55 ~ +150 |
The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The GTT2623 is universally used for all commercial-industrial applications.