Features: ·Low on-resistance·Capable of 2.5V gate drive·Optimal DC/DC battery applicationSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 ID @TA=25 7 A Continuous Drain Current3...
GTS217E: Features: ·Low on-resistance·Capable of 2.5V gate drive·Optimal DC/DC battery applicationSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Volta...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage | VDS | 20 | V |
Gate-Source Voltage | VGS | ±12 | V |
Continuous Drain Current3 | ID @TA=25 | 7 | A |
Continuous Drain Current3 | ID @TA=70 | 5.7 | A |
Pulsed Drain Current1 | IDM | 30 | A |
Total Power Dissipation | PD @TA=25 | 1.5 | W |
Linear Derating Factor | 0.012 | W/ | |
Operating Junction and Storage Temperature Range | Tj, Tstg | -55 ~ +150 |
The GTS217E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.