Features: *Low on-resistance*Capable of 2.5V gate drive*Low drive current*Surface mount packagePinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 , VGS@10V ID@TA=258...
GTC9926E: Features: *Low on-resistance*Capable of 2.5V gate drive*Low drive current*Surface mount packagePinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 ...
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Parameter |
Symbol |
Ratings |
Unit |
Drain-Source Voltage |
VDS |
20 |
V |
Gate-Source Voltage |
VGS |
±12 |
V |
Continuous Drain Current3 , VGS@10V |
ID@TA=25 |
4.6 |
A |
Continuous Drain Current3 , VGS@10V |
ID@TA=70 |
3.7 |
A |
Pulsed Drain Current1,2 |
IDM |
20 |
A |
Power Dissipation |
PD@TA=25 |
1 |
W |
Linear Derating Factor |
0.008 |
W/ | |
Operating Junction and Storage Temperature Range |
Tj, Tstg |
-55 ~ +150 |
The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.