Features: ·Low on-resistance·Capable of 2.5V gate drive·Low drive current·Surface mount packageSpecifications Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID @ Ta = 25 Continuous Drain Current3, VGS @ -10V 5.0 A ID @ Ta = 7...
GTC220E: Features: ·Low on-resistance·Capable of 2.5V gate drive·Low drive current·Surface mount packageSpecifications Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-...
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Symbol | Parameter | Ratings | Units |
VDS | Drain-Source Voltage | 20 | V |
VGS | Gate-Source Voltage | ±12 | V |
ID @ Ta = 25 | Continuous Drain Current3, VGS @ -10V | 5.0 | A |
ID @ Ta = 70 | Continuous Drain Current3, VGS @ -10V | 4.0 | A |
IDM | Pulsed Drain Current1,2 | 20 | A |
PD @ Ta = 25 | Total Power Dissipation | 1 | W |
Linear Derating Factor | 0.008 | mW/ | |
TJ, TSTG | Junction and Storage Temperature Range | -55 ~ +150 |
The GTC220E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.