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GT80J101B

Application` Enhancement mode type` High speed: tf = 0.40 s (max) (IC = 80 A)` Low saturation voltage: VCE (sat) = 2.9 V (max) (IC = 80 A)Specifications Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V Continuous collect...

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GT80J101B: Application` Enhancement mode type` High speed: tf = 0.40 s (max) (IC = 80 A)` Low saturation voltage: VCE (sat) = 2.9 V (max) (IC = 80 A)Specifications Characteristics Symbol Rating Unit ...

GT80J101B Data Sheet

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Part Number:
GT80J101B
Supply Ability:
5000

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Product Details

Description



Application

`  Enhancement mode type
`  High speed: tf = 0.40 s (max) (IC = 80 A)
`  Low saturation voltage: VCE (sat) = 2.9 V (max) (IC = 80 A)


Specifications

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±20 V
Continuous collector
current		 @Tc = 100°C IC 33 A
@Tc = 25°C 80
Pulsed collector current (Note 1) ICP 160 A
Collector power
dissipation		 @Tc = 100°C PC 80 W
@Tc = 25°C 200
@Ta = 25°C 3.5
Junction temperature Tj 150
Storage temperature Tstg -55~150
Screw torque - 0.8 N`m



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