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GT6924E

Features: *Lower on-resistance*Fast Switching Characteristic*Included Schottky DiodePinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage (MOSFET) VDS 20 V Gate-Source Voltage (MOSFET) VGS ± 6 V Continuous Drain Current3 (MOSFET) ID@TA=...

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SeekIC No. : 004357065 Detail

GT6924E: Features: *Lower on-resistance*Fast Switching Characteristic*Included Schottky DiodePinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage (MOSFET) VDS 20 ...

GT6924E Data Sheet

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Part Number:
GT6924E
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

*Lower on-resistance
*Fast Switching Characteristic
*Included Schottky Diode


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Ratings
Unit
Drain-Source Voltage (MOSFET)
VDS
20
V
Gate-Source Voltage (MOSFET)
VGS
± 6
V
Continuous Drain Current3 (MOSFET)
ID@TA=25
1.0
A
Continuous Drain Current3 (MOSFET)
ID@TA=100
0.8
A
Pulsed Drain Current1 (MOSFET)
IDM
8
A
Reverse Voltage (Schottky)
VKA
20
V
Average Forward Current (Schottky)
IF
0.5
A
Pulsed Forward Current1 (Schottky)
IFM
2.0
A
Reverse Voltage (Schottky)
PD@TA=25
0.9
W
Linear Derating Factor
0.9
W
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +125



Description

The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.




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