GT30J121(Q), US $ 2.64-4.39 , Toshiba, GT30J121(Q) DataSheet download, circuit diagram from SeekIC.com

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GT30J121(Q): IGBT Transistors 600V/30A DIS

GT30J121(Q) Data Sheet

US $ 2.64~4.39 / Piece | Get Latest Price

Part Number:: GT30J121(Q)
Mfg:: Toshiba
Supply Ability:: 5000

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0~1
1~10
10~100
100~250

Unit Price
$4.39
$3.52
$2.99
$2.64

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2025/12/17

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Maximum Gate Emitter Voltage :	+/- 20 V	Continuous Collector Current at 25 C :	30 A
Maximum Operating Temperature :	+ 150 C	Package / Case :	TO-3P
Packaging :	Bulk

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 30 A
Package / Case : TO-3P
Packaging : Bulk

Parameters:

Technical/Catalog Information	GT30J121(Q)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	30A
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 30A
Power - Max	170W
Mounting Type	Through Hole
Package / Case	*
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	GT30J121 Q GT30J121Q

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GT30J121(Q)

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