Features: ·Low Gate Charge·Low On-resistanceSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 ID @TA=25 -2.3 A Continuous Drain Current3 ID @TA=70 -2.0 ...
GT2625: Features: ·Low Gate Charge·Low On-resistanceSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Conti...
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Parameter |
Symbol |
Ratings |
Unit |
Drain-Source Voltage |
VDS |
-30 |
V |
Gate-Source Voltage |
VGS |
±12 |
V |
Continuous Drain Current3 |
ID @TA=25 |
-2.3 |
A |
Continuous Drain Current3 |
ID @TA=70 |
-2.0 |
A |
Pulsed Drain Current1 |
IDM |
-20 |
A |
Total Power Dissipation |
PD @TA=25 |
1.2 |
W |
Linear Derating Factor |
0.01 |
W/ | |
Operating Junction and Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
The GT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The GT2625 is universally used for all commercial-industrial applications.