Features: *Low Gate Charge*Low On-resistanceSpecifications Parameter Symbol Ratings Unit Drain-Source VoltageGate-Source Voltage VDSVGS -30±20 VV Continuous Drain Current3Continuous Drain Current3 ID @TA=25ID @TA=70 -2-1.6 AA Pulsed Drain Current1Power Dissipation IDMPD @T...
GT2623: Features: *Low Gate Charge*Low On-resistanceSpecifications Parameter Symbol Ratings Unit Drain-Source VoltageGate-Source Voltage VDSVGS -30±20 VV Continuous Drain Current3Continuou...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
-30 ±20 |
V V |
Continuous Drain Current3 Continuous Drain Current3 |
ID @TA=25 ID @TA=70 |
-2 -1.6 |
A A |
Pulsed Drain Current1 Power Dissipation |
IDM PD @TA=25 |
-20 1.2 |
A W |
Operating Junction and Storage Temperature Range | Tj,Tstg | -55 ~ +150 | |
Linear Derating Factor | 0.01 | W/ |
The GT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The GT2623 is universally used for all commercial-industrial applications.