Features: ·Low Gate Charge·Surface Mount package·RoHS CompliantSpecifications Symbol Parameter Ratings Units VDS Drain-Source Voltage 50 V VGS Gate-Source Voltage ±20 V ID @ Ta = 25 Continuous Drain Current3, VGS@10V 520 mA ID @ Ta = 70 Continuous Drain Current3, VGS@...
GT2622: Features: ·Low Gate Charge·Surface Mount package·RoHS CompliantSpecifications Symbol Parameter Ratings Units VDS Drain-Source Voltage 50 V VGS Gate-Source Voltage ±20 V ID @ T...
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Symbol | Parameter | Ratings | Units |
VDS | Drain-Source Voltage | 50 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID @ Ta = 25 | Continuous Drain Current3, VGS@10V | 520 | mA |
ID @ Ta = 70 | Continuous Drain Current3, VGS@10V | 410 | mA |
IDM | Pulsed Drain Current1 | 1.5 | A |
PD @ Ta = 25 | Total Power Dissipation | 0.8 | W |
Linear Derating Factor | 0.006 | mW/ | |
TJ, TSTG | Operating Junction and Storage Temperature Range | -55 ~ +150 |
The GT2622 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package of GT2622 is universally used for all commercial-industrial applications