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Application`Third-generation IGBT `Enhancement mode type `High speed: tf = 0.32s (max) `Low saturation voltage: VCE (sat) = 2.7 V (max) Specifications Characteristic Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage VCES VGES 1200 ± 20 V V Collec...

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SeekIC No. : 004356992 Detail

GT15Q102: Application`Third-generation IGBT `Enhancement mode type `High speed: tf = 0.32s (max) `Low saturation voltage: VCE (sat) = 2.7 V (max) Specifications Characteristic Symbol Rating ...

GT15Q102 Data Sheet

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Part Number:: GT15Q102
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/6/6

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Product Details

Description

Application

`Third-generation IGBT
`Enhancement mode type
`High speed: t_f = 0.32s (max)
`Low saturation voltage: V_{CE (sat)} = 2.7 V (max)

Specifications

Characteristic		Symbol	Rating	Unit
Collector-emitter voltage Gate-emitter voltage		V_CES V_GES	1200 ± 20	V V
Collector current	DC	I_C	15	A
Collector current	1ms	I_CP	30	A
Collector power dissipation (Tc=25)		P_C	170	W
Junction temperature Storage temperature range		T_jT_stg	150 55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and invidual reliability data (i.e. reliability test report and estimated failure rate, etc).

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GT15Q102

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