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Application Fourth-generation IGBT FRD included between emitter and collector Enhancement mode type High speed : tf = 0.20 s (TYP.) (IC = 15 A)Low saturation voltage : VCE (sat) = 1.8V (TYP.) IC = 15A)Specifications CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VC...

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SeekIC No. : 004356991 Detail

GT15M321: Application Fourth-generation IGBT FRD included between emitter and collector Enhancement mode type High speed : tf = 0.20 s (TYP.) (IC = 15 A)Low saturation voltage : VCE (sat) = 1.8V (TYP.) IC = 1...

GT15M321 Data Sheet

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Part Number:: GT15M321
Supply Ability:: 5000

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Product Details

Description

Application

Fourth-generation IGBT
FRD included between emitter and collector
Enhancement mode type
High speed : t_f= 0.20 s (TYP.) (I_C = 15 A)
Low saturation voltage : V_{CE (sat)} = 1.8V (TYP.) I_C = 15A)

Specifications

CHARACTERISTIC		SYMBOL	RATING	UNIT
Collector-Emitter Voltage		V_CES	900	V
Gate-Emitter Voltage		V_GES	±25	V
Collector Current	DC	I_C	15	A
Collector Current	1ms	I_CP	30	A
Emitter−Collector Foward Current	DC	I_F	15	A
Emitter−Collector Foward Current	1ms	I_FM	120	A
Collector Power Dissipation (T_c = 25)		P_C	55	W
Junction Temperature		T_j	150
Storage Temperature		T_stg	-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)

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GT15M321

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