Application Fourth-generation IGBT FRD included between emitter and collector Enhancement mode type High speed : tf = 0.20 s (TYP.) (IC = 15 A)Low saturation voltage : VCE (sat) = 1.8V (TYP.) IC = 15A)Specifications CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VC...
GT15M321: Application Fourth-generation IGBT FRD included between emitter and collector Enhancement mode type High speed : tf = 0.20 s (TYP.) (IC = 15 A)Low saturation voltage : VCE (sat) = 1.8V (TYP.) IC = 1...
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CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | |
Collector-Emitter Voltage |
VCES |
900 |
V | |
Gate-Emitter Voltage |
VGES |
±25 |
V | |
Collector Current | DC |
IC |
15 |
A |
1ms |
ICP |
30 | ||
Emitter−Collector Foward Current |
DC |
IF |
15 |
A |
1ms |
IFM |
120 | ||
Collector Power Dissipation (Tc = 25) |
PC |
55 |
W | |
Junction Temperature |
Tj |
150 |
||
Storage Temperature |
Tstg |
-55 to 150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)