GT15M321

Application Fourth-generation IGBT FRD included between emitter and collector Enhancement mode type High speed : tf = 0.20 s (TYP.) (IC = 15 A)Low saturation voltage : VCE (sat) = 1.8V (TYP.) IC = 15A)Specifications CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VC...

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SeekIC No. : 004356991 Detail

GT15M321: Application Fourth-generation IGBT FRD included between emitter and collector Enhancement mode type High speed : tf = 0.20 s (TYP.) (IC = 15 A)Low saturation voltage : VCE (sat) = 1.8V (TYP.) IC = 1...

floor Price/Ceiling Price

Part Number:
GT15M321
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Application

Fourth-generation IGBT
FRD included between emitter and collector
Enhancement mode type
High speed : tf = 0.20 s (TYP.) (IC = 15 A)
Low saturation voltage : VCE (sat) = 1.8V (TYP.) IC = 15A)



Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCES
900
V
Gate-Emitter Voltage
VGES
±25
V
Collector Current DC
IC
15
A
1ms
ICP
30
Emitter−Collector Foward
Current
DC
IF
15
A
1ms
IFM
120
Collector Power Dissipation
(Tc = 25)
PC
55
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)




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