Features: • Fourth-generation IGBT• Fast switching (FS• Enhancement mode type• High speed: tf = 0.03 s (typ.)• Low saturation Voltage: VCE (sat) = 1.90 V (typ.)• FRD included between emitter and collectorSpecifications Parameter Symbol Rating Unit C...
GT15J321: Features: • Fourth-generation IGBT• Fast switching (FS• Enhancement mode type• High speed: tf = 0.03 s (typ.)• Low saturation Voltage: VCE (sat) = 1.90 V (typ.)• ...
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Parameter | Symbol | Rating | Unit | |
Collector-emitter voltage | VCES | 600 | V | |
Gate-emitter voltage | VGES | ±20 | V | |
Collect Current | DC | IC | 15 | A |
1 ms | ICP | 30 | A | |
Emitter-collector forward current |
DC | IF | 15 | A |
1 ms | IFM |
30 | ||
Collector power dissipation (Tc = 25) |
PC | 30 | W | |
Junction Temperature | Tj | 150 | ||
Storage Temperature Range | Tstg | -55 ~ +150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).