GT10Q101

Features: • Third-generation IGBT• Enhancement mode type• High speed: tf = 0.32 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications Parameter Symbol Ratings Unit Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VG...

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SeekIC No. : 004356977 Detail

GT10Q101: Features: • Third-generation IGBT• Enhancement mode type• High speed: tf = 0.32 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications Parameter Sym...

floor Price/Ceiling Price

Part Number:
GT10Q101
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Description



Features:

• Third-generation IGBT
• Enhancement mode type
• High speed: tf = 0.32 s (max)
• Low saturation voltage: VCE (sat) = 2.7 V (max)



Specifications

Parameter Symbol Ratings Unit
Collector-Emitter voltage VCES
1200 V
Gate-Emitter voltage VGES ±20 V
Collector current DC IC 10 A
Collector current 1 ms ICp 20 A
Collector power dissipation
(Tc = 25)
PC 140 W
Junction temperature TJ 150
torage Temperature Tstg -55to+150



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