Features: • Third-generation IGBT• Enhancement mode type• High speed: tf = 0.32 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications Parameter Symbol Ratings Unit Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VG...
GT10Q101: Features: • Third-generation IGBT• Enhancement mode type• High speed: tf = 0.32 s (max)• Low saturation voltage: VCE (sat) = 2.7 V (max)Specifications Parameter Sym...
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DescriptionThe GT100DA120U is designed as one kind of insulated gate bipolar transistors (trench I...
Parameter | Symbol | Ratings | Unit |
Collector-Emitter voltage | VCES |
1200 | V |
Gate-Emitter voltage | VGES | ±20 | V |
Collector current DC | IC | 10 | A |
Collector current 1 ms | ICp | 20 | A |
Collector power dissipation (Tc = 25) |
PC | 140 | W |
Junction temperature | TJ | 150 | |
torage Temperature | Tstg | -55to+150 |