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GT10J321

Application• Fourth-generation IGBT• Enhancement mode type• Fast switching (FS): Operating frequency up to 50 kHz (reference)• High speed: tf = 0.03 s (typ.)• Low switching loss : Eon = 0.26 mJ (typ.): Eoff = 0.18 mJ (typ.)• Low saturation voltage: VCE (sat) = 2...

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GT10J321: Application• Fourth-generation IGBT• Enhancement mode type• Fast switching (FS): Operating frequency up to 50 kHz (reference)• High speed: tf = 0.03 s (typ.)• Low switc...

GT10J321 Data Sheet

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Part Number:
GT10J321
Supply Ability:
5000

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Product Details

Description



Application

• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
• High speed: tf = 0.03 s (typ.)
• Low switching loss : Eon = 0.26 mJ (typ.)
: Eoff = 0.18 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector


Specifications

Characteristics Symbol Rating Unit
Collector-emitter voltage VCES 600 V
Gate-emitter voltage VGES ±25 V
Continuous Collector
current		 @ Tc = 100 IC 5 A
@ Tc = 25 10
Pulsed collector current ICP 20 A
Diode forward current DC IF 10 A
Pulsed IFP 20
Collector power
dissipation		 @ Tc = 100 PC 11 W
@ Tc = 25 29
Junction temperature Tj 150
Storage temperature range Tstg −55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).


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