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GT10J312

Features: * Third-generation IGBT* Enhancement mode type* High speed : tf = 0.30s (Max.)* Low saturation voltage : VCE (sat) = 2.7V (Max.)* FRD included between emitter and collectorSpecifications CHARACTERISTIC SYMBOL RATING UNIT Collector−Emitter Voltage VCES 600 ...

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SeekIC No. : 004356974 Detail

GT10J312: Features: * Third-generation IGBT* Enhancement mode type* High speed : tf = 0.30s (Max.)* Low saturation voltage : VCE (sat) = 2.7V (Max.)* FRD included between emitter and collectorSpecifications ...

GT10J312 Data Sheet

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Part Number:
GT10J312
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Features:

* Third-generation IGBT
* Enhancement mode type
* High speed : tf = 0.30s (Max.)
* Low saturation voltage : VCE (sat) = 2.7V (Max.)
* FRD included between emitter and collector


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
VCES
600
V
Gate−Emitter Voltage
VGES
±20
V
Collector Current DC
IC
10
A
1ms
ICP
20
A
Emitter−Collector Forward
Current		 DC
IF
10
A
1ms
IFM
20
A
Collector Power Dissipation
(Tc = 25)
PC
60
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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