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GT10J303

Features: `Third-generation IGBT`Enhancement mode type`High speed : tf = 0.30s (Max.) (IC = 10A)`Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A)`FRD included between emitter and collector`Third-generation IGBT`Enhancement mode type`High speed : tf = 0.30s (Max.) (IC = 10A)`Low saturati...

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SeekIC No. : 004356973 Detail

GT10J303: Features: `Third-generation IGBT`Enhancement mode type`High speed : tf = 0.30s (Max.) (IC = 10A)`Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A)`FRD included between emitter and collecto...

GT10J303 Data Sheet

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Part Number:
GT10J303
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`Third-generation IGBT
`Enhancement mode type
`High speed : tf = 0.30s (Max.) (IC = 10A)
`Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A)
`FRD included between emitter and collector

`Third-generation IGBT
`Enhancement mode type
`High speed : tf = 0.30s (Max.) (IC = 10A)
`Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A)
`FRD included between emitter and collector






Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
VCES
600
V
Gate-Emitter Voltage
VGES
±20
V
Collector Current
DC
IC
10
A
1ms
ICP
20
A
Emitter−Collector Forward
Current
DC
IF
10
A
1ms
IFM
20
A
Collector Power Dissipation
(Tc = 25°C)
PC
30
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).



CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
VCES
600
V
Gate-Emitter Voltage
VGES
±20
V
Collector Current
DC
IC
10
A
1ms
ICP
20
A
Emitter−Collector Forward
Current
DC
IF
10
A
1ms
IFM
20
A
Collector Power Dissipation
(Tc = 25°C)
PC
30
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).








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