Features: ·Low On-Resistance ·Simple Drive Requirement ·Dual P MOSFET PackageSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current3 ID @TA=25 -7.7 A Continuous Drain Current3 ...
GSS4957: Features: ·Low On-Resistance ·Simple Drive Requirement ·Dual P MOSFET PackageSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage ...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage | VDS | -30 | V |
Gate-Source Voltage | VGS | ±20 | V |
Continuous Drain Current3 | ID @TA=25 |
-7.7 | A |
Continuous Drain Current3 | ID @TA=70 |
-6.1 | A |
Pulsed Drain Current1 | IDM | -30 | A |
Total Power Dissipation | PD @TA=25 |
2 | W |
Linear Derating Factor | 0.016 | W/ | |
Operating Junction and Storage Temperature Range |
Tj, Tstg | -55~ +150 |
The GSS4957 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.