Features: ·Complementary to GSMBT4401·High DC Current Gain: 100-300 at 150mASpecifications Parameter Symbol Ratings Unit Junction Temperatureq Tj +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage at Ta=25 VCBO -40 ...
GSMBT4403: Features: ·Complementary to GSMBT4401·High DC Current Gain: 100-300 at 150mASpecifications Parameter Symbol Ratings Unit Junction Temperatureq Tj +150 Storage Tem...
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Features: High frequency current gainHigh speed switchingFor complementary use with PNP type GSMBT...
Features: ·Low collector saturation voltage·High speed switching·For complementary use with NPN ty...
Parameter |
Symbol |
Ratings |
Unit |
Junction Temperatureq |
Tj |
+150 |
|
Storage Temperature |
Tstg |
-55 ~ +150 |
|
Collector to Base Voltage at Ta=25 |
VCBO |
-40 |
V |
Collector to Emitter Voltage at Ta=25 |
VCEO |
-40 |
V |
Emitter to Base Voltage at Ta=25 |
VEBO |
-5 |
V |
Collector Current at Ta=25 |
IC |
-600 |
mA |
Total Power Dissipation at Ta=25 |
PD |
225 |
mW |