Specifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55~+150 Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector Current IC 1 A Total Po...
GSD2656: Specifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55~+150 Collector to Base Voltage VCBO 30 V Collector to Emitter Vo...
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Features: • Silicon Epitaxial Planar Diode• Fast switching dual common-anode diode, es...
Parameter | Symbol | Ratings | Unit |
Junction Temperature | Tj | +150 | |
Storage Temperature | Tstg | -55~+150 | |
Collector to Base Voltage | VCBO | 30 | V |
Collector to Emitter Voltage | VCEO | 30 | V |
Emitter to Base Voltage | VEBO | 6 | V |
Collector Current | IC | 1 | A |
Total Power Dissipation | PD | 225 | mW |