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GSD2004WS

Features: • Silicon Epitaxial Planar Diode• Fast switching diode,especially suited for applications requiring high voltage capabilitySpecifications Parameter Symbol Value Unit Continuous reverse voltage VR 240 V Peak repetitive reverse voltage VRRM 300 V Peak re...

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SeekIC No. : 004356492 Detail

GSD2004WS: Features: • Silicon Epitaxial Planar Diode• Fast switching diode,especially suited for applications requiring high voltage capabilitySpecifications Parameter Symbol Value Unit ...

GSD2004WS Data Sheet

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Part Number:
GSD2004WS
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Silicon Epitaxial Planar Diode
• Fast switching diode,especially suited for
   applications requiring high voltage capability


Specifications

Parameter Symbol Value Unit
Continuous reverse voltage VR 240 V
Peak repetitive reverse voltage VRRM 300 V
Peak repetitive reverse curren IRRM 200 mA
Forward current (continuous) IF 225 mA
Peak repetitive forward current IRFM 625 mA
Non-repetitive peak forward current
tp = 1 stp = 1 µs		 IFSM 4.0
1.0		 A
Power dissipation Ptot 200(1) mW
Typical Thermal Resistance Junction to Ambiant Air RJA 650(1) °C/W
Junction Temperature Tj 150 °C
Storage Temperature Range TS 65 to +150 °C



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