Features: • Silicon Epitaxial Planar Diode• Fast switching diode,especially suited for applications requiring high voltage capability• Lead (Pb)-free component• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECSpecifications Parameter Test condition Symb...
GSD2004WS-V: Features: • Silicon Epitaxial Planar Diode• Fast switching diode,especially suited for applications requiring high voltage capability• Lead (Pb)-free component• Component in ...
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Features: • Silicon Epitaxial Planar Diode• Fast switching dual common-anode diode, es...
Parameter | Test condition | Symbol | Value | Unit |
Continuous reverse voltage | VR | 240 | V | |
Peak repetitive reverse voltage | VRRM | 300 | V | |
Forward current (continuous) | IF | 225 | mA | |
Peak repetitive forward current | IFRM | 625 | mA | |
Non-repetitive peak forward current |
tp = 1 s | IFSM | 4.0 | A |
Non-repetitive peak forward current |
tp = 1 s | IFSM | 1.0 | A |
Power dissipation | Ptot | 2001) | mW |