Features: • Silicon Epitaxial Planar Diode• Fast switching diode, especially suited for applications requiring high voltage capability• Lead (Pb)-free component• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECSpecifications Parameter Test condition ...
GSD2004W-V: Features: • Silicon Epitaxial Planar Diode• Fast switching diode, especially suited for applications requiring high voltage capability• Lead (Pb)-free component• Component in...
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Features: • Silicon Epitaxial Planar Diode• Fast switching dual common-anode diode, es...
Parameter |
Test condition |
Symbol |
Value |
Unit |
Continuous reverse voltage |
VR |
240 |
V | |
Peak repetitive reverse voltage |
VRRM |
300 |
V | |
Forward current (continuous) |
IF |
225 |
mA | |
Peak repetitive forward current |
IFRM |
625 |
mA | |
Non-repetitive peak forward current |
tp = 1 s |
IFSM |
4.0 |
A |
tp = 1 s |
IFSM |
1.0 |
A | |
Power dissipation |
Ptot |
350 |
mW |