Features: • Silicon Epitaxial Planar Diode• Fast switching dual in-series diode, especially suited for applications requiring high voltage capabilityPinoutSpecifications Parameter Test condition Symbol Value Unit Continuous reverse voltage VR 240 V Peak repetitive ...
GSD2004S: Features: • Silicon Epitaxial Planar Diode• Fast switching dual in-series diode, especially suited for applications requiring high voltage capabilityPinoutSpecifications Parameter ...
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Features: • Silicon Epitaxial Planar Diode• Fast switching dual common-anode diode, es...
Parameter | Test condition | Symbol | Value | Unit |
Continuous reverse voltage | VR | 240 | V | |
Peak repetitive reverse voltage | VRRM | 300 | V | |
Peak repetitive reverse curren | IRRM | 200 | mA | |
Forward current (continuous) | IF | 225 | mA | |
Peak repetitive forward current | IRFM | 625 | mA | |
Non-repetitive peak forward current | tp = 1 µs | IFSM | 4.0 | A |
tp = 1 s | IFSM | 1.0 | A | |
Power dissipation | Ptot | 350(1) | mW |