PinoutSpecifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -65 ~ +150 Reverse Voltage VR 85 V Repetitive Reverse Voltage VRRM 85 V Forward Current IO 250 mA Repetitive Forward Current IFM 500 mA Forward ...
GSBAS16: PinoutSpecifications Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -65 ~ +150 Reverse Voltage VR 85 V Repetitive Reverse Voltage ...
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Parameter | Symbol | Ratings | Unit |
Junction Temperature | Tj | +150 | |
Storage Temperature | Tstg | -65 ~ +150 | |
Reverse Voltage | VR | 85 | V |
Repetitive Reverse Voltage | VRRM | 85 | V |
Forward Current | IO | 250 | mA |
Repetitive Forward Current | IFM | 500 | mA |
Forward Surge Current (1ms) | IFSM | 1000 | mA |
Total Power Dissipation | PD | 225 | mW |
The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package.