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GSB1132

Features: Low VCE(sat). VCE(sat) = -0.2V(Typ.) (IC/IB = -500mA / -50 mA)Specifications Parameter Symbol Ratings Unit Junction Temperature TJ +150 Storage Temperature Tstg -55 ~ +150 Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Em...

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SeekIC No. : 004356351 Detail

GSB1132: Features: Low VCE(sat). VCE(sat) = -0.2V(Typ.) (IC/IB = -500mA / -50 mA)Specifications Parameter Symbol Ratings Unit Junction Temperature TJ +150 Storage Temperature Tstg -55 ~ +...

GSB1132 Data Sheet

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Part Number:
GSB1132
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low VCE(sat). VCE(sat) = -0.2V(Typ.) (IC/IB = -500mA / -50 mA)


Specifications

Parameter Symbol Ratings Unit
Junction Temperature TJ +150
Storage Temperature Tstg -55 ~ +150
Collector to Base Voltage VCBO -40 V
Collector to Emitter Voltage VCEO -32 V
Emitter to Base Voltage VEBO -5 V
Collector Current(DC) IC -1 A
Collector Current(PULSE) (note1) IC -2 A
Collector Power Dissipation PD 0.5 W
Collector Power Dissipation (note2) PD 2 W
Note 1:Single pulse, PW=100ms
Note 2: When mounted on a 40*40*0.7 mm ceramic board.


Description

The GSB1132 is a epitaxial planar type PNP silicon transistor .




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