GS8644ZV36B

Features: • NBT (No Bus Turn Around) functionality allows zero waitRead-Write-Read bus utilization; fully pin-compatible withboth pipelined and flow through NtRAM™, NoBL™ andZBT™ SRAMs• 1.8 V +10%/10% core power supply and I/O supply• User-configurable Pipeline ...

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SeekIC No. : 004356134 Detail

GS8644ZV36B: Features: • NBT (No Bus Turn Around) functionality allows zero waitRead-Write-Read bus utilization; fully pin-compatible withboth pipelined and flow through NtRAM™, NoBL™ andZBT...

floor Price/Ceiling Price

Part Number:
GS8644ZV36B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through      NtRAM™, NoBL™ and ZBT™ SRAMs
• 1.8 V +10%/10% core power supply and I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 9Mb, 18Mb, and 36Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-, 165- or 209-bump BGA package



Specifications

Symbol Description Value Unit
VDD Voltage on VDD Pins 0.5 to 3.6 V
VDDQ Voltage in VDDQ Pins 0.5 to 3.6 V
I/O Voltage on I/O Pins 0.5 to VDDQ +0.5 ( 3.6 V max.) V
VIN Voltage on Other Input Pins 0.5 to VDD +0.5 ( 3.6 V max.) V
IIN Input Current on Any Pin +/20 mA
IOUT Output Current on Any I/O Pin +/20 mA
PD Package Power Dissipation 1.5 W
TSTG Storage Temperature 55 to 125 oC
TBIAS Temperature Under Bias 55 to 125 oC



Description

The GS8644ZV18/36/72 is a 72Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/ single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the GS8644ZV18/36/72 is switched from read to write cycles.

Because GS8644ZV18/36/72 is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs of GS8644ZV18/36/72 include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. GS8644ZV18/36/72 feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.

The GS8644ZV18/36/72 may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edgetriggered registers that capture input signals, the GS8644ZV18/36/72 incorporates a rising edge triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.

The GS8644ZV18/36/72 is implemented with GSI's high performance CMOS technology and is available in a JEDECstandard 119-bump, 165-bump or 209-bump BGA package.




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