Features: • Fast access time: 10, 12, 15 ns• CMOS low power operation: 300/250/220/180 mA at minimum cycle time• Single 3.3 V ± 0.3 V power supply• All inputs and outputs are TTL-compatible• Fully static operation• Industrial Temperature Option: 40° to 85•...
GS78116B: Features: • Fast access time: 10, 12, 15 ns• CMOS low power operation: 300/250/220/180 mA at minimum cycle time• Single 3.3 V ± 0.3 V power supply• All inputs and outputs are...
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Rating | Symbol | Value | Unit |
Supply Voltage | VDD | 0.5 to +4.6 | V |
Input Voltage | VIN | 0.5 to VDD+0.5 ( 4.6 V max.) |
V |
Output Voltage | VOUT | 0.5 to VDD+0.5 ( 4.6 V max.) |
V |
Allowable power dissipation | PD | 1.5 | W |
Storage temperature | Tstg | -8510+150 |
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to ecommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
The GS78116 is a high speed CMOS static RAM organized as 524,288-words by 16-bits. Static design eliminates the need for external clocks or timing strobes. The GS78116 operates on a single 3.3 V power supply and all inputs and outputs are TTLcompatible. The GS78116 is available in 14 mm x 22 mm BGA package.