GS71116

Features:

• Fast access time: 10, 12, 15ns
• CMOS low power operation: 100/85/70 mA at min. cycle time.
• Single 3.3V ± 0.3V power supply
• All inputs and outputs are TTL compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: -40° to 85°C
• Package line up
   J: 400mil, 44 pin SOJ package
   TP: 400mil, 44 pin TSOP Type II package
   U: 6 mm x 8 mm Fine Pitch Ball Grid Array package


Pinout




Specifications

Parameter	Symbol	Rating	Unit
Supply Voltage	VDD	0.5 to +4.6	V
Input Voltage	VIN	0.5 to VDD +0.5 ( 4.6 V max.)	V
Output Voltage	VOUT	0.5 to VDD +0.5 ( 4.6 V max.)	V
Allowable power dissipation	PD	0.7	W
Storage temperature	TSTG	55 to 150

Description

The GS71116 is a high speed CMOS static RAM organized as 65,536-words by 16-bits. Static design eliminates the need for external clocks or timing strobes. Operating on a single 3.3V power supply and all inputs and outputs are TTL compatible. The GS71116 is available in a 6x8 mm Fine Pitch BGA package as well as in 400 mil SOJ and 400 mil TSOP Type-II packages.