Features: `Low On-State Resistance:0.3(max)`Ultra High Speed SwitchingApplication·Notebook PCs·Cellular and portable phones·On-board power supplies·Li-ion battery SystemSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ...
GS152B: Features: `Low On-State Resistance:0.3(max)`Ultra High Speed SwitchingApplication·Notebook PCs·Cellular and portable phones·On-board power supplies·Li-ion battery SystemSpecifications Parameter...
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Parameter | Symbol | Ratings | Unit |
Drain-Source Voltage | VDS | -20 | V |
Gate-Source Voltage | VGS | ±12 | V |
Continuous Drain Current3 | ID @TA=25 | -0.7 | A |
Pulsed Drain Current1,2 | IDM | -2.8 | A |
Power Dissipation | PD @TA=25 | 0.35 | W |
Linear Derating Factor | 0.0028 | W/ | |
Operating Junction and Storage Temperature Range | Tj, Tstg | -55 ~ +150 |
The GS152B provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The GS152B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.