Features: ·Glass passivated chip·High current capability·High reliability·Low reverse current·Low forward voltage drop·Fast switching for high efficiencySpecifications RATING SYMBOL GRN3 GRN4 GRN5 GRN6 GRN7 UNIT Maximum repetitive peak reverse voltage VRRM 100 200 400 600 800 ...
GRN3: Features: ·Glass passivated chip·High current capability·High reliability·Low reverse current·Low forward voltage drop·Fast switching for high efficiencySpecifications RATING SYMBOL GRN3 GRN...
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RATING | SYMBOL | GRN3 | GRN4 | GRN5 | GRN6 | GRN7 | UNIT |
Maximum repetitive peak reverse voltage | VRRM | 100 | 200 | 400 | 600 | 800 | V |
Maximum RMS voltage | VRMS | 70 | 140 | 280 | 420 | 560 | V |
Maximum DC blocking voltage | VDC | 100 | 200 | 400 | 600 | 800 | V |
Maximum Average Forward Current Ta = 75 °C | IF(AV) | 1.0 | A | ||||
Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) |
IFSM | 30 | A | ||||
Maximum instantaneous forward voltage at 1.0A | VF | 1.2 | V | ||||
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=125 |
IR IR(H) |
1.2 5.0 |
A | ||||
Maximum reverse recovery time (Note 1) | Trr | 150 | nS | ||||
Typical junction capacitance (Note 2) | CJ | 15 | F | ||||
Typical thermal resistance (Note 3) | TJ | - 65 to + 150 | |||||
Storage Temperature Range | TSTG | - 65 to + 150 |