Features: ·Glass passivated chip·High current capability·High reliability·Low reverse current·Low forward voltage drop·Fast switching for high efficiencySpecifications Symbols GR2A GR2B GR2D GR2G GR2J GR2K GR2M Units Maximum repetitive peak reverse voltage VRRM 50 100 200 40...
GR2B: Features: ·Glass passivated chip·High current capability·High reliability·Low reverse current·Low forward voltage drop·Fast switching for high efficiencySpecifications Symbols GR2A GR2B GR...
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·Glass passivated chip
·High current capability
·High reliability
·Low reverse current
·Low forward voltage drop
·Fast switching for high efficiency
Symbols | GR2A | GR2B | GR2D | GR2G | GR2J | GR2K | GR2M | Units | |
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum Average Forward Current Ta = 75 °C | IF(AV) | 2.0 | A | ||||||
Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) |
IFSM | 75 | A | ||||||
Maximum instantaneous forward voltage at 1.0A | VF | 1.3 | V | ||||||
Maximum DC reverse current TA=25 at rated DC blocking voltage TA=125 |
IR | 10 | A | ||||||
IR(H) | 500 | A | |||||||
Maximum reverse recovery time (Note 1) | Trr | 150 | 250 | 500 | nS | ||||
Typical junction capacitance (Note 2) | CJ | 15 | F | ||||||
Junction Temperature Range | TJ | - 65 to + 150 | /W | ||||||
Storage Temperature Range | TSTG | - 65 to + 150 |