GP350MHB06S

Features:

·n - Channel
·High Switching Speed
·Low Forward Voltage Drop
·Isolated Base


Application

·PWM Motor Control
·UPS


Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T_case = 25°C unless stated otherwise

Symbol	Parameter	Test Conditions	Max.	Units
VCES	Collector-emitter voltage	VGE = 0V	600	V
VGES	Gate-emitter voltage		±20	V
IC	Collector current	DC, Tcase = 25°C	500	A
		DC, Tcase = 75°C	350	A
IC(PK)		1ms, Tcase = 25°C	1000	A
		1ms, Tcase = 75°C	700	A
Pmax	Maximum power dissipation	(Transistor)	1750	W
Visol	Isolation voltage	Commoned terminals to base plate. AC RMS, 1 min, 50Hz	2500	V

Description

The Powerline range of modules GP350MHB06S includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.

The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.

The GP350MHB06S has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

GP350MHB06S incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. 

GP350MHB06S applications include dc motor drives, ac pwm drivesand ups systems.