Features: *Simple Drive Requirement*Lower On-resistance*Fast SwitchingSpecifications Parameter Symbol Ratings Unit N-channel P-channel Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V Continuous Drain Current3 ID @TA=25 2.6 -2.3 A Continuous...
GP2030S: Features: *Simple Drive Requirement*Lower On-resistance*Fast SwitchingSpecifications Parameter Symbol Ratings Unit N-channel P-channel Drain-Source Voltage VDS 20 -20 V Gate-So...
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Parameter | Symbol | Ratings | Unit | |
N-channel | P-channel | |||
Drain-Source Voltage | VDS | 20 | -20 | V |
Gate-Source Voltage | VGS | ±12 | ±12 | V |
Continuous Drain Current3 | ID @TA=25 | 2.6 | -2.3 | A |
Continuous Drain Current3 | ID @TA=70 | 2.1 | -1.8 | A |
Pulsed Drain Current1 | IDM | 15 | -10 | A |
Total Power Dissipation | PD @TA=25 | 2.0 | W | |
Linear Derating Factor | 0.016 | W/ | ||
Operating Junction and Storage Temperature Range | Tj, Tstg | -55 ~ +150 |
The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.