Features: ·Low VCE(SAT)·Non Punch Through Silicon·Isolated Copper Baseplate·Low Inductance Internal Construction·200A Per ArmApplication·High Reliability Inverters·Motor Controllers·Traction Drives·Resonant ConvertersSpecificationsStresses above those listed under 'Absolute Maximum Ratings' may ca...
GP201MHS18: Features: ·Low VCE(SAT)·Non Punch Through Silicon·Isolated Copper Baseplate·Low Inductance Internal Construction·200A Per ArmApplication·High Reliability Inverters·Motor Controllers·Traction Drives·...
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Symbol | Parameter |
Test Conditions |
Max. |
Units |
VCES | Collector-emitter voltage |
VGE = 0V |
1800 |
V |
VGES | Gate-emitter voltage |
- |
±20 |
V |
IC | Collector current |
DC, Tcase = 80°C for Tj = 125°C |
200 |
A |
IC(PK) | Peak collector current |
1ms, Tcase = 120°C |
400 |
A |
Pmax | Max. transistor power dissipation |
Tcase = 25°C, Tj = 150°C |
1500 |
W |
Visol | Isolation voltage |
Commoned terminals to base plate. AC RMS, 1 min, 50Hz |
4000 |
V |
The Powerline range of high power modules GP201MHS18 includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.
The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the GP201MHS18 is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.
The GP201MHS18 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.