GP200MHS12

Features:

·Non Punch Through Silicon
·Isolated Copper Baseplate
·Low Inductance Internal Construction


Specifications

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise

Symbol	Parameter	Test Conditions	Max.	Units
VCES	Collector-emitter voltage	VGE = 0V	1200	V
VGES	Gate-emitter voltage	-	±20	V
IC	Continuous collector current	DC, Tcase = 72°C	200	A
IC(PK)	Peak collector current	1ms, Tcase = 72°C	400	A
Pmax	Max. power dissipation	Tcase = 25°C Tj = 150°C	1490	W
Visol	Isolation voltage	Commoned terminals to base plate. AC RMS, 1 min, 50Hz	2500	V

Description

The Powerline range of high power modules GP200MHS12 includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A.

The GP200MHS12 is a half bridge 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications.

The GP200MHS12 incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.