Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY·GOOD TRADE OFF BETWEEN LEAKAGE·CURRENT AND FORWARD VOLTAGE DROP·LOW LEAKAGE CURRENTSpecifications Parameter Symbol GMR60H100CT Unit Repetitive peak reverse voltage VRRM 45 V RMS forward current IF(RMS) 30 A Average forward curr...
GMR30H45C: Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY·GOOD TRADE OFF BETWEEN LEAKAGE·CURRENT AND FORWARD VOLTAGE DROP·LOW LEAKAGE CURRENTSpecifications Parameter Symbol GMR60H100CT Unit Repetit...
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Features: High junction temperature capabilityGood trade off between leakage current and forward v...
Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY·GOOD TRADE OFF BETWEEN LEAKAGE·CURRENT AND FORWARD...
Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY·GOOD TRADE OFF BETWEEN LEAKAGE·CURRENT AND FORWARD...
Parameter | Symbol | GMR60H100CT | Unit |
Repetitive peak reverse voltage | VRRM | 45 | V |
RMS forward current | IF(RMS) | 30 | A |
Average forward current = 0.5 TO-220AB TO-263-2 TO-3P TC = 155°C per diode per device |
IF(AV) | 15 30 |
A |
Surge non repetitive forward current tp = 10 ms sinusoidal |
IFSM | 180 | A |
Repetitive peak reverse current tp = 2s square F= 1kHz |
IRRM | 1 | A |
Voltage rate of change(rated VR) | Dv/dt | 10000 | V/s |
Operating junction and storage temperature range | TJ, TSTG | -45 to +150 150 |
°C |