Features: ·High junction temperature capability·Good trade off between leakage current and forward voltage drop·Low leakage currentSpecifications Parameter Symbol GMR60H100CT Unit Repetitive peak reverse voltage VRRM 150 V Average forward current = 0.5TO-220AB TO-263-2 TO-3PTC = 1...
GMR20H150C: Features: ·High junction temperature capability·Good trade off between leakage current and forward voltage drop·Low leakage currentSpecifications Parameter Symbol GMR60H100CT Unit Repetit...
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Features: ·High junction temperature capability·Good trade off between leakage current and forward...
Features: ·High junction temperature capability·Good trade off between leakage current and forward...
Features: ·High junction temperature capability·Good trade off between leakage current and forward...
Parameter | Symbol | GMR60H100CT | Unit |
Repetitive peak reverse voltage | VRRM | 150 | V |
Average forward current = 0.5 TO-220AB TO-263-2 TO-3P TC = 155°C per diode per device |
IF(AV) | 10 20 |
A |
Surge non repetitive forward current tp = 10 ms sinusoidal |
IFSM | 250 | A |
Voltage rate of change(rated VR) | dV/dt | 10000 | V/s |
Maximum operating junction temperature* | TJ | 175 | °C |
Storage temperature range | TSTG | -45 to + 125 |
°C |