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GMR10H150C

Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY·GOOD TRADE OFF BETWEEN LEAKAGE·CURRENT AND FORWARD VOLTAGE DROP·LOW LEAKAGE CURRENTSpecifications Parameter Symbol GMR60H100CT Unit Repetitive peak reverse voltage VRRM 150 V RMS forward current IF(RMS) 10 V Average forward cur...

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GMR10H150C: Features: ·HIGH JUNCTION TEMPERATURE CAPABILITY·GOOD TRADE OFF BETWEEN LEAKAGE·CURRENT AND FORWARD VOLTAGE DROP·LOW LEAKAGE CURRENTSpecifications Parameter Symbol GMR60H100CT Unit Repetit...

GMR10H150C Data Sheet

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Part Number:
GMR10H150C
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Description



Features:

·HIGH JUNCTION TEMPERATURE CAPABILITY
·GOOD TRADE OFF BETWEEN LEAKAGE
·CURRENT AND FORWARD VOLTAGE DROP
·LOW LEAKAGE CURRENT




Specifications

Parameter Symbol GMR60H100CT Unit
Repetitive peak reverse voltage VRRM 150 V
RMS forward current IF(RMS) 10 V
Average forward current = 0.5
TO-220AB TO-263-2 TO-3P
TC = 155°C
per diode
per device
 IF(AV) 5
10		 A
Surge non repetitive forward current
tp = 10 ms sinusoidal		 IFSM 120 A
Voltage rate of change(rated VR) dV/dt 10000 V/s
Maximum operating junction temperature* TJ 175 °C
Storage temperature range TSTG -65 to + 175
 °C





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