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GM7N600F

Features: · RDS(on) (Max 1.2 􀋟 )@VGS=10V· Gate Charge (Typical 28nC)· Improved dv/dt Capability, High Ruggedness· 100% Avalanche Tested· Maximum Junction Temperature Range (150°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V ID Continuo...

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SeekIC No. : 004354213 Detail

GM7N600F: Features: · RDS(on) (Max 1.2 􀋟 )@VGS=10V· Gate Charge (Typical 28nC)· Improved dv/dt Capability, High Ruggedness· 100% Avalanche Tested· Maximum Junction Temperature Range (150°C)Specificat...

GM7N600F Data Sheet

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Part Number:
GM7N600F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· RDS(on) (Max 1.2 􀋟 )@VGS=10V
· Gate Charge (Typical 28nC)
· Improved dv/dt Capability, High Ruggedness
· 100% Avalanche Tested
· Maximum Junction Temperature Range (150°C)


Specifications

Symbol Parameter Value Units
VDSS Drain to Source Voltage 600 V
ID Continuous Drain Current(@TC = 25°C) 7.0* A
  Continuous Drain Current(@TC = 100°C) 4.4* A
IDM Drain Current Pulsed (Note 1) 28* A
VGS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 420 mJ
EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Total Power Dissipation(@TC = 25 °C) 48 W
  Derating Factor above 25 °C 0.38 W/°C
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
TL Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.		 300 °C



Description

This Power MOSFET GM7N600F is produced using DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. GM7N600F is well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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