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GLT5640L16

Features: • Single 3.3V ((±0.3V) power supply• High speed clock cycle time -5.5:183MHz<3-3-3>,-6:166MHz<3-3-3>, -7:143MHz<3-3-3>, -8: 125MHz<3-3-3> -10 : 100MHz<3-3-3>• Fully synchronous operation referenced to clock rising edge• Possible to as...

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SeekIC No. : 004353842 Detail

GLT5640L16: Features: • Single 3.3V ((±0.3V) power supply• High speed clock cycle time -5.5:183MHz<3-3-3>,-6:166MHz<3-3-3>, -7:143MHz<3-3-3>, -8: 125MHz<3-3-3> -10 : 100MHz&l...

GLT5640L16 Data Sheet

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Part Number:
GLT5640L16
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 3.3V ((±0.3V) power supply
• High speed clock cycle time -5.5:183MHz<3-3-3>,-6:166MHz<3-3-3>, -7:143MHz<3-3-3>,
   -8: 125MHz<3-3-3> -10 : 100MHz<3-3-3>
• Fully synchronous operation referenced to clock rising edge
• Possible to assert random column access in every cycle
• Quad internal banks controlled by BA0 & BA1 (Bank Select)
• Byte control by LDQM and UDQM
• Programmable Wrap sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable /CAS latency (2 and 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• X16 organization
• LVTTL compatible inputs and outputs
• 4,096 refresh cycles / 64ms
• Burst termination by Burst stop and Precharge command


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Conditions
Value
Unit
Supply Voltage
VDD
with respect to VSS
-0.5 to 4.6
V
Supply Voltage for Output
VDDQ
with respect to VSSQ
-0.5 to 4.6
V
Input Voltage
VI
with respect to VSS
-0.5 to VDD+0.5
V
Output Voltage
VO
with respect to VSSQ
-0.5 to VDDQ+0.5
V
Short circuit output current
IO
50
mA
Power dissipation
PD
Ta = 25 °C
1
W
Operating temperature
TOPT
0 to 70
Storage temperature
TSTG
-65 to 150

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be
operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.




Description

The GLT5640L16 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 1,048,576 x 16 x 4 (word x bit x bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture and clock frequency up to 183MHz. All input and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL). GLT5640L16 are packaged in 54-pin TSOPII.




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