Features: · 4,194,304 words by 4 bits organization.· Fast access time and cycle time· Low power dissipation.· Read-Modify-Write,RAS -Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh.· 2,048 refresh cycles per 32ms.· Available in 300 mil 26(24) SOJ and TSOPII.· 3.3V±0.3V Vcc Power Supply volta...
GLT4160L04: Features: · 4,194,304 words by 4 bits organization.· Fast access time and cycle time· Low power dissipation.· Read-Modify-Write,RAS -Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh.· 2,048 ref...
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PinoutDescriptionThe GLT41016-40J4 is designed as a 65,536x16 bit highperformance CMOS dynamic ran...
The GLT4160L04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The GLT4160L04 offers page cycle access with Extended Data Output. The GLT4160L04 has 11 row- and 11 column-addresses, and accepts 2048-cycle refresh in 32 ms.
The GLT4160L04 provides EDO PAGE MODE operation which allows for fast data access within a row-address defined boundary, up to 2048 x 4 bits with cycle times as short as 18ns.