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GLT41316

Features: ·65,536 words by 16 bits organization.·Fast access time and cycle time.·Dual WE Input.·Low power dissipation.·Read-Modify-Write, RAS -Only Refresh,CAS-Before-RAS Refresh, Hidden Refresh and Test Mode Capability.·256 refresh cycles per 4ms.·Available in 40-pin 400 mil SOJ,and 40/44 pin TS...

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SeekIC No. : 004353835 Detail

GLT41316: Features: ·65,536 words by 16 bits organization.·Fast access time and cycle time.·Dual WE Input.·Low power dissipation.·Read-Modify-Write, RAS -Only Refresh,CAS-Before-RAS Refresh, Hidden Refresh an...

GLT41316 Data Sheet

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Part Number:
GLT41316
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·65,536 words by 16 bits organization.
·Fast access time and cycle time.
·Dual WE Input.
·Low power dissipation.
·Read-Modify-Write, RAS -Only Refresh,
 CAS-Before-RAS Refresh, Hidden
  Refresh and Test Mode Capability.
·256 refresh cycles per 4ms.
·Available in 40-pin 400 mil SOJ,and 40/44 pin TSOP (II).
·Single 5.0V±10% Power Supply.
·All inputs and Outputs are TTL compatible.
·Fast Page Mode operation.


Pinout

Connection Diagram


Specifications

Operating Temperature, TA (ambient).......-0 to +70
Storage Temperature(plastic)................-55 to +150
Voltage Relative to VSS............................-1.0V to + 7.0V
Short Circuit Output Current...................................50mA
Power Dissipation....................................................1.0W


Description

The GLT41316 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41316 offers Fast Page mode ,and has both BYTE WRITE and WORD WRITE access cycles via two WE pins. The GLT41316 has symmetric address and accepts 256-cycle refresh in 4ms interval.

All inputs of GLT41316 are TTL compatible. Fast Page Mode operation allows random access up to 256x16 bits, within a page, with cycle times as short as 18ns.

The GLT41316 is best suited for graphics, and DSP applications requiring high performance memories.




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