GI818

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Manufacturer: Vishay General Semiconductor
Voltage - DC Reverse (Vr) (Max): 1000V (1kV)
Current - Average Rectified (Io): 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F: -
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Reverse Recovery Time (trr): 750ns


Features:

-Plastic package has Underwriters Laboratory Flammability Classification 94V-0
-High temperature metallurgically bonded construction
-Glass passivated cavity-free junction
-Capable of meeting environmental standards of MIL-S-19500
-Fast switching for high efficiency
-1.0 Ampere operation at T_A=75°C with no thermal runaway
-Typical IR less than 0.1µA
-High temperature soldering guaranteed:350°C/10 seconds 0.375" (9.5mm) lead length, 5 lbs.(2.3kg) tension




Specifications

	SYMBOLS	GI810	GI811	GI812	GI814	GI816	GI817	GI818	UNITS
Maximum recurrent peak reverse voltage	VRRM	50	100	200	400	600	800	1000	Volts
Maximum RMS voltage	VRMS	35	70	140	280	420	560	700	Volts
Maximum DC blocking voltage	VDC	50	100	200	400	600	800	1000	Volts
Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=75°C	I(AV)	1.0							Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)at TA=75°C	IFSM	30.0							Amps
Maximum instantaneous forward voltage at 1.0A	VF	1.2							Volts
Maximum DC reverse current TA=25°C at rated DC blocking voltage TA=100°C	IR	10.0 100.0							µA
Maximum reverse recovery time (NOTE1)	trr	750.0							ns
Typical junction capacitance (NOTE 2)	CJ	25.0							pF
Typical thermal resistance (NOTE 3)	RJA	45.0							°C/W
Operating junction and storage temperature range	TJ,TSTG	-65 to +175							°C