Features: • Advanced Process Technology• High Density Cell Design for Ultra Low On-Resistance• Specially Designed for Low Voltage DC/DC Converters• Fast Switching for High EfficiencySpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 3...
GFP70N03: Features: • Advanced Process Technology• High Density Cell Design for Ultra Low On-Resistance• Specially Designed for Low Voltage DC/DC Converters• Fast Switching for High Ef...
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Parameter |
Symbol |
Limit |
Unit |
Drain-Source Voltage |
VDS |
30 |
V |
Gate-Source Voltage |
VGS |
±20 | |
Continuous Drain Current(1) |
ID |
70 |
A |
Pulsed Drain Current |
IDM |
200 | |
Maximum Power Dissipation TC = 25°C TC = 100°C |
PD |
62.5 25 |
W |
Operating Junction and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
Lead Temperature (1/8" from case for 5 sec.) |
TL |
275 |
°C |
Junction-to-Case Thermal Resistance |
RJC |
2.0 |
°C/W |
Junction-to-Ambient Thermal Resistance |
RJA |
62.5 |
°C/W |